2SB1110-C The Hitachi 2SB1110-C is a PNP bipolar transistor designed for general electronic applications. It offers a maximum collector-emitter voltage of -200V and a continuous collector current of -0.1A.
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2SB1110-C

Available from 1 distributors
Mfr Name: Hitachi
Hitachi
The Hitachi 2SB1110-C is a PNP bipolar transistor designed for general electronic applications. It offers a maximum collector-emitter voltage of -200V and a continuous collector current of -0.1A.
✓ Total Stock: 18 pcs
$ Price Range: $0.99

2SB1110-C Available from 1 distributor

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2SB1110-C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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2SB1110-C Description

Short technical summary and product information.

The Hitachi 2SB1110-C is a PNP bipolar transistor housed in a TO-126 package. It features a maximum collector-emitter voltage of -200V and a maximum continuous collector current of -0.1A. The device has a collector power dissipation of 1.25W and a minimum transition frequency of 140MHz.

 

With a DC current gain (hFE) ranging from 100 to 200 for the -C variant, this transistor is suitable for various amplification and switching tasks. The operating and storage junction temperature range is from -50°C to +150°C.

 

This transistor can be replaced by several other part numbers, including 2SA1352, 2SA1353, and KSA1381. Its complementary NPN transistor is the 2SD1610. SMD versions like BF623 and BF823 are also available, offering similar parameters for surface mounting applications.

2SB1110-C Quick Information

Product Type: Bipolar Transistor
Canonical Name: 2SB1110-C PNP Bipolar Transistor
Subcategory: PNP

2SB1110-C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SB1110-C Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB1110-C Features

  • PNP bipolar transistor in TO-126 package.
  • Maximum collector-emitter voltage of -200V.
  • Continuous collector current of -0.1A.
  • Minimum transition frequency of 140MHz.
  • Wide operating temperature range of -50°C to +150°C.

2SB1110-C Applications

  • Suitable for general amplification circuits.
  • Used in various switching applications.
  • Complementary to NPN transistors like 2SD1610.
  • Surface mount equivalents available (BF623, BF823).

2SB1110-C FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the 2SB1110-C?

-200 V

What is the continuous collector current rating of the 2SB1110-C?

-0.1 A

What is the DC current gain (hFE) range for the 2SB1110-C?

100 to 200

What is the minimum transition frequency for this transistor?

140 MHz

What is the operating temperature range for the 2SB1110-C?

-50 to +150 °C

What package type is the 2SB1110-C supplied in?

TO-126

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