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5,780 pcs
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5780 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BAV99-13-01-F from Diodes Incorporated is a PNP Epitaxial Planar Transistor suitable for general purpose switching and amplifier applications. This component is designed for automated assembly processes and comes in a SOT-89 surface mount package.
Key electrical characteristics include a maximum reverse voltage (BVCEO) of 40V, a maximum collector current (Ic) of 200mA, and a transition frequency of 100MHz. The transistor has a maximum power dissipation of 1000mW. Its construction utilizes epitaxial planar die technology, and it has a complementary NPN type available, the DXT3904.
The SOT-89 package is designed for surface mounting, making it ideal for automated assembly. This transistor is a reliable choice for various electronic designs requiring discrete PNP amplification or switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The reverse voltage (BVCEO) is 40V.
The maximum collector current (Ic) is 200mA.
The transition frequency (ft) is 100MHz.
The maximum power dissipation is 1000mW (1W).
It is offered in a surface-mount SOT-89 package.
Yes, a complementary NPN type (DXT3904) is available.