| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9 pcs
|
9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Structure |
The Hitachi 2SB1109-C is a P-N-P bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of -160V and a maximum collector current of -0.1A. The transistor has a current gain (hFE) ranging from 60 to 320, with the -C suffix indicating a specific gain range of 100 to 200.
With a transition frequency of 140MHz, the 2SB1109-C is suitable for signal amplification and switching circuits. It is housed in a TO-126 package, which is a common type for discrete power transistors, facilitating through-hole mounting.
This transistor's complementary pair is the 2SD1609 (N-P-N structure). It can be replaced by several other Hitachi transistors, including the 2SA1220A, 2SA1352, 2SA1353, 2SA1380, 2SA1381, 2SA1406, 2SA1407, 2SB1110, HSB1109, KSA1220A, and KSA1381.
The part is often marked as 'B1109' on the component itself. Its specifications make it a versatile component for hobbyist and professional electronic projects requiring a P-N-P transistor with moderate power handling and frequency response.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the 2SB1109-C is -160V.
The maximum collector current for the 2SB1109-C is -0.1A.
The 2SB1109-C has a current gain (hFE) ranging from 100 to 200.
The transition frequency for the 2SB1109-C is 140MHz.
The 2SB1109-C is supplied in a TO-126 package.