| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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70 pcs
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70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SA949-Y is a P-N-P bipolar junction transistor (BJT) manufactured by Toshiba, housed in a TO-92MOD package. This transistor is designed for various electronic applications requiring amplification or switching.
Key electrical characteristics include a maximum collector-emitter voltage of -150V and a maximum collector-base voltage of -150V. The emitter-base voltage is rated at a maximum of -5V. It can handle a maximum collector current of -0.05A and has a maximum collector power dissipation of 0.8W.
The transistor features a current gain (hFE) ranging from 120 to 240 and a transition frequency (fT) of 120MHz. These specifications make it suitable for signal amplification and switching circuits.
The TO-92MOD package is a common surface-mount or through-hole package, offering ease of integration into electronic designs. The p-n-p structure indicates its specific semiconductor properties for circuit implementation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2SA949-Y transistor has a p-n-p structure.
The maximum collector-emitter voltage is -150V.
The maximum collector current is -0.05A.
The current gain (hFE) ranges from 120 to 240.
The transition frequency is 120MHz.
The 2SA949-Y transistor comes in a TO-92MOD package.