TMBT3906.LMT
Toshiba
The Toshiba TMBT3906.LMT is a single bipolar junction transistor (BJT) in the Transistors - Bipolar (BJT) - Single category. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SB1015A is a Silicon PNP Bipolar Junction Transistor (BJT) designed for various electronic applications. This component offers a maximum collector-emitter voltage of 60V and a maximum collector current of 3A, making it suitable for moderate power switching and amplification tasks.
With a maximum power dissipation rating of 2W and an operating temperature range up to 150°C, the 2SB1015A is built for reliable performance under demanding conditions. It is housed in a TO-220NIS package, which is a common through-hole form factor facilitating ease of assembly and heat dissipation.
This transistor is part of the broader category of discrete semiconductor products, specifically falling under single BJT transistors. Its PNP structure and specifications make it a versatile component for designers working with general-purpose amplification and switching circuits.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 60V.
The maximum collector current is 3A.
The maximum power dissipation is 2W.
The maximum operating temperature is 150°C.
The 2SB1015A is supplied in a TO-220NIS package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.