| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| SVHC Present |
The Toshiba 2SA1618 is a general-purpose PNP bipolar junction transistor (BJT) suitable for small signal amplification. It is designed for surface mount applications and comes in a 5-pin SMV package.
Key electrical characteristics include a maximum collector current of 150 mA and a maximum collector-emitter voltage of 50 V. The transistor offers a minimum DC current gain (hFE) of 120 and a nominal transition frequency (fT) of 120 MHz. Its maximum power dissipation at ambient temperature is 0.3 W.
The component utilizes a silicon element and has a gull-wing terminal form with tin-lead plating. The package body material is plastic/epoxy, and it is configured as a common emitter with two elements. This transistor is ideal for various amplifier circuits where a small signal PNP device is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150 mA.
50 V.
120 minimum.
120 MHz.
0.3000 W at ambient temperature.
SMV, 2-3L1A, 5 pins with gull wing terminals.
Surface mount.
