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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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55,020 pcs
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55020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The 2PB710ASL,215 is a PNP bipolar junction transistor manufactured by Nexperia USA Inc. It is designed for general-purpose switching and amplification applications.
Key electrical specifications include a maximum collector-emitter voltage (Vceo) of 50V, a maximum collector current (Ic) of 500mA, and a minimum DC current gain (hFE) of 170 at 150mA collector current and 10V collector-emitter voltage. The transistor features a transition frequency (ft) of 140MHz and a maximum power dissipation of 250mW.
The device is offered in a surface-mount TO-236-3 / SC-59 / SOT-23-3 package with a supplier device package of TO-236AB. It is rated for operation up to a junction temperature of 150°C.
The maximum collector-emitter voltage (Vceo) is 50V.
The maximum collector current (Ic) is 500mA.
The transistor is available in a surface-mount TO-236-3 / SC-59 / SOT-23-3 package.
The maximum operating junction temperature is 150°C.
The minimum DC current gain (hFE) is 170 at Ic=150mA and Vce=10V.
The transition frequency (ft) is 140MHz.
The maximum power dissipation (Pd) is 250mW.