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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2PB1219AR from NXP Semiconductors is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. This component is housed in an SC-70 surface-mount package, facilitating integration into compact circuit designs. Key electrical characteristics include a maximum collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 0.5A. Its surface mount capability makes it ideal for automated assembly processes and space-constrained PCBs.
Designed for general-purpose amplification and switching tasks, the 2PB1219AR offers reliable performance. The SC-70 package provides a small footprint while maintaining adequate thermal dissipation for its rated power. This transistor is a component within the broader category of single bipolar transistors, offering specific PNP characteristics for circuit designers.
Environmental compliance data indicates RoHS3 compliance, MSL 1 (Unlimited) rating, and REACH unaffected status, though these are noted with low confidence due to lack of verification. The part is classified under NXP Semiconductors' product lines, with a base product number of 2PB12.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 50V.
The maximum continuous collector current is 0.5A.
The 2PB1219AR is supplied in an SC-70 package.
The 2PB1219AR is designed for surface mounting.