BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,100 pcs
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5100 pcs | On Request | 1 | On Request | On Request | 1045 | On Request | On Request |
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| SVHC Present |
The BSH121,135 is an N-Channel enhancement mode TrenchMOS MOSFET designed and manufactured by NXP Semiconductors. This device utilizes TrenchMOS technology to deliver efficient switching performance in a compact surface-mount package.
Key electrical specifications include a drain-to-source voltage (Vdss) of 75V and a continuous drain current (Id) of 300mA at 25°C. The MOSFET has a maximum on-resistance (Rds On) of 4 Ohms at a gate drive of 4.5V and 500mA drain current. The gate threshold voltage is a maximum of 1.3V at 1mA, allowing for low-voltage drive operation. The device features a maximum gate charge of 1nC at 8V and an input capacitance of 40pF at 10V Vds.
The BSH121,135 is supplied in an SC-70 (SOT-323) surface-mount package, suitable for automated assembly. It has a maximum power dissipation of 700mW and an operating junction temperature range of -65°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 75V.
The continuous drain current (Id) is 300mA at 25°C.
The operating junction temperature range is -65°C to 150°C.
The BSH121,135 is available in an SC-70 (SOT-323) surface-mount package.
The maximum on-resistance (Rds On) is 4 Ohms at 500mA Id and 4.5V Vgs.
The maximum gate threshold voltage (Vgs(th)) is 1.3V at 1mA Id.