| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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48 pcs
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48 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Central Semiconductor 2N706A is a silicon epitaxial planar NPN transistor engineered for high-speed saturated switching applications. This component is housed in a TO-18 case, a common package for discrete transistors.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 15V and a maximum Continuous Collector Current (IC) of 50mA. The device offers a DC Current Gain (hFE) ranging from 20 to 60 and a transition frequency (fT) of 200MHz. Saturation voltages are specified, with VCE(SAT) at a maximum of 0.6V and VBE(SAT) between 0.7V and 0.9V under specific test conditions.
Thermal management is supported by specified thermal resistances, with ΘJA at 500°C/W and ΘJC at 150°C/W. The operating and storage junction temperature range is broad, from -65°C to +200°C. Switching characteristics are detailed, including turn-on time (ton) of 40ns, turn-off time (toff) of 75ns, and storage time (ts) of 25ns, making it suitable for fast switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the 2N706A transistor is 15V.
The maximum Continuous Collector Current (IC) for the 2N706A is 50mA.
The 2N706A transistor comes in a TO-18 case.
The operating and storage junction temperature range for the 2N706A transistor is -65°C to +200°C.
The transition frequency (fT) of the 2N706A transistor is 200MHz.