| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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125 pcs
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125 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The CENTRAL SEMICONDUCTOR 2N706A is a silicon epitaxial planar NPN transistor designed for high-speed saturated switching applications. This component operates with a maximum Collector-Base Voltage (VCBO) of 25V and a maximum Collector Current (IC) of 50mA.
Key electrical characteristics include a DC Current Gain (hFE) ranging from 20 to 60, a Transition Frequency (fT) of 200MHz, and a Collector-Emitter Saturation Voltage (VCE(SAT)) of 0.6V maximum. Switching times are also specified, with turn-on time (ton) at 40ns and turn-off time (toff) at 75ns.
The transistor is housed in a TO-18 case and is suitable for through-hole mounting. It has a maximum power dissipation of 0.3W at 25°C ambient temperature and 1.0W at 25°C case temperature. The operating and storage junction temperature range is from -65°C to +200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Base Voltage (VCBO) for the 2N706A transistor is 25V.
The maximum continuous collector current (IC) for the 2N706A is 50mA.
The 2N706A transistor comes in a TO-18 case.
The DC Current Gain (hFE) for the 2N706A ranges from 20 to 60.
The transition frequency (fT) of the 2N706A transistor is 200MHz.
The turn-on time (ton) for the 2N706A is 40ns and the turn-off time (toff) is 75ns.