2N7002NXBKR N-Channel MOSFET from Nexperia, rated for 60V drain-source voltage and 270mA continuous current. Surface mount in SOT23 package.
Mfr Part #:

2N7002NXBKR

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
N-Channel MOSFET from Nexperia, rated for 60V drain-source voltage and 270mA continuous current. Surface mount in SOT23 package.
✓ Total Stock: 49,020 pcs
$ Price Range: $0.03 - $0.18

2N7002NXBKR Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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49,020 pcs
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2N7002NXBKR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Pitch
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

2N7002NXBKR Description

Short technical summary and product information.

The 2N7002NXBKR is an N-channel enhancement mode Field-Effect Transistor (FET) from Nexperia, built using Trench MOSFET technology. It is designed for low-power switching applications and is housed in a small SOT23 (TO-236AB) surface-mount package.

 

Key electrical specifications include a maximum drain-source voltage of 60V, continuous drain current of 270mA at 25°C ambient temperature (330mA at case temperature), and a maximum on-state resistance of 2.8 Ohms at 10V gate drive. The device features low gate charge (1 nC) and low input capacitance (23.6 pF), enabling fast switching with minimal drive requirements. It is logic-level compatible with a maximum gate threshold voltage of 2.1V.

 

Typical applications include relay drivers, high-speed line drivers, low-side load switches, and general switching circuits. The device includes built-in ElectroStatic Discharge (ESD) protection greater than 2 kV (HBM). Operating temperature range is -55°C to 150°C.

2N7002NXBKR Quick Information

Product Type: MOSFET
Series: 2N7002NXBK
Canonical Name: 2N7002NXBKR N-Channel MOSFET
Subcategory: N-Channel MOSFET

2N7002NXBKR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N7002NXBKR Estimated Pricing

Qty Low High
1+ $0.18 $0.18
10+ $0.10 $0.10
100+ $0.07 $0.07
500+ $0.06 $0.06
1,000+ $0.05 $0.05
3,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N7002NXBKR Features

  • N-Channel Trench MOSFET technology.
  • Rated for 60V drain-source voltage.
  • Continuous drain current up to 330mA.
  • Low gate charge for fast switching.
  • ESD protection above 2kV.

2N7002NXBKR Applications

  • Relay driver in automotive systems.
  • High-speed line driver circuits.
  • Low-side load switch for power management.
  • General switching circuits.

2N7002NXBKR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vds) of the 2N7002NXBKR?

The maximum drain-source voltage is 60V.

What is the maximum continuous drain current (Id) at 25°C ambient?

The maximum continuous drain current is 270mA at Tamb=25°C (330mA at Tsp=25°C).

What is the package type and mounting style?

It is available in a SOT23 (TO-236AB) surface-mount package.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (junction).

What is the maximum on-state resistance (Rds on)?

The maximum Rds(on) is 2.8 Ohms at VGS=10V, ID=200mA, Tj=25°C.

Is the device RoHS compliant?

RoHS3 compliance is listed but unverified (low confidence).

What is the typical gate threshold voltage?

The maximum gate threshold voltage is 2.1V at ID=250µA.

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