2N7002BKV,115 Dual N-channel enhancement mode MOSFET in SOT-666 package. Features 60V drain-source voltage, 340mA continuous drain current, and logic-level gate.
Mfr Part #:

2N7002BKV,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
Dual N-channel enhancement mode MOSFET in SOT-666 package. Features 60V drain-source voltage, 340mA continuous drain current, and logic-level gate.
✓ Total Stock: 13,020 pcs
$ Price Range: $0.07 - $0.44

2N7002BKV,115 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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13,020 pcs
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2N7002BKV,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

2N7002BKV,115 Description

Short technical summary and product information.

The 2N7002BKV,115 is a dual N-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology. It is housed in an ultra-small SOT-666 Surface-Mounted Device (SMD) plastic package. The device is logic-level compatible, allowing direct drive from low-voltage logic, and includes ESD protection up to 2 kV HBM.

 

Electrical characteristics include a drain-source voltage rating of 60 V, continuous drain current of 340 mA, and a peak drain current of 1.2 A. The drain-source on-resistance is typically 1 Ω with a maximum of 1.6 Ω at Vgs = 10 V and Id = 500 mA. Gate threshold voltage ranges from 0.5 V to 2.1 V at Id = 250 µA. The device features low gate charge (0.6 nC max) and low input capacitance (50 pF max), enabling very fast switching.

 

Typical applications include relay drivers, high-speed line drivers, low-side load switches, and general switching circuits. The SOT-666 package measures 1.6 mm x 1.2 mm x 0.55 mm with a 0.5 mm pitch, suitable for compact designs. Operating junction temperature range is -55°C to 150°C.

2N7002BKV,115 Quick Information

Product Type: Dual N-Channel MOSFET
Series: 2N7002BKV
Canonical Name: 2N7002BKV,115 Dual N-Channel MOSFET 60V 340mA SOT-666
Subcategory: Dual N-Channel

2N7002BKV,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N7002BKV,115 Estimated Pricing

Qty Low High
1+ $0.44 $0.44
10+ $0.27 $0.27
100+ $0.17 $0.17
500+ $0.13 $0.13
1,000+ $0.11 $0.11
2,000+ $0.10 $0.10
4,000+ $0.08 $0.08
8,000+ $0.07 $0.07
24,000+ $0.07 $0.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N7002BKV,115 Features

  • Dual N-channel Trench MOSFET design.
  • Logic-level gate for low-voltage drive.
  • 60V drain-source voltage rating.
  • 340mA continuous drain current.
  • ESD protection up to 2kV.

2N7002BKV,115 Applications

  • Relay driver for inductive loads.
  • High-speed line driver circuits.
  • Low-side load switch applications.
  • General purpose switching circuits.

2N7002BKV,115 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

60 V.

What is the continuous drain current?

340 mA.

What is the on-resistance?

1 Ω typical, 1.6 Ω maximum at Vgs = 10 V, Id = 500 mA.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is this device available in?

SOT-666 surface mount package.

Is this device RoHS compliant?

Yes, RoHS3 compliant (unverified).

Does it have ESD protection?

Yes, up to 2 kV HBM.

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