| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,970 pcs
|
1970 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The Nexperia USA Inc. 2N7002BKV is a dual N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is designed for applications requiring logic-level compatibility and very fast switching.
Key electrical specifications include a drain-source voltage (VDS) of up to 60V and a continuous drain current (ID) of 340mA per transistor at VGS = 10V and Tamb = 25°C. The drain-source on-state resistance (RDSon) is a maximum of 1.6Ω under specific pulsed conditions. The device also offers ESD protection up to 2kV.
Packaged in an ultra-small SOT666 surface-mounted device (SMD) plastic package, the 2N7002BKV is suitable for space-constrained designs. Its dimensions are 1.6 mm x 1.2 mm x 0.55 mm with a 0.5 mm pitch. The operating temperature range is -55°C to 150°C.
This MOSFET is well-suited for applications such as relay drivers, high-speed line drivers, low-side load switches, and general switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the 2N7002BKV is 60V.
The continuous drain current (ID) is 340mA per transistor at VGS = 10V and Tamb = 25°C.
The drain-source on-state resistance (RDSon) is a maximum of 1.6Ω under pulsed conditions (VGS = 10V, ID = 500mA, tp ≤ 300 µs, δ ≤ 0.01, Tj = 25°C).
The 2N7002BKV is supplied in an ultra-small SOT666 plastic surface-mounted device (SMD) package.
The 2N7002BKV is suitable for relay drivers, high-speed line drivers, low-side load switches, and switching circuits.