| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
268,020 pcs
|
268020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
155 pcs
|
155 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The 2N7002BKS,115 is a dual N-channel enhancement mode MOSFET manufactured by Nexperia using Trench MOSFET technology. It is designed for logic-level gate drive with a maximum gate threshold voltage of 2.1V at 250µA drain current. Each transistor can handle a drain-source voltage of 60V and a continuous drain current of 300mA at 25°C, with a peak current of 1.2A. The on-state resistance is typically 1.3Ω at 5V gate drive, with a maximum of 2Ω. The device features ESD protection up to 2kV (HBM) and is AEC-Q101 qualified for automotive applications. Typical applications include relay drivers, high-speed line drivers, low-side load switches, and general switching circuits. The MOSFET is housed in a 6-TSSOP (SOT363) surface-mount package with a body size of 2.1mm x 1.25mm x 0.95mm and 0.65mm lead pitch. The maximum power dissipation is 295mW per transistor and 445mW per device at 25°C ambient.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.29 | $0.29 |
| 10+ | $0.18 | $0.18 |
| 100+ | $0.11 | $0.11 |
| 500+ | $0.08 | $0.08 |
| 1,000+ | $0.07 | $0.07 |
| 3,000+ | $0.06 | $0.06 |
| 6,000+ | $0.05 | $0.05 |
| 9,000+ | $0.04 | $0.04 |
| 24,000+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The device is available in a 6-TSSOP (SOT363) surface-mount package.
The maximum junction temperature is 150°C, and the storage temperature range is -65°C to 150°C.
The RoHS status is listed as RoHS3 compliant, but this is unverified.
The drain-source voltage (Vdss) is 60V.
The continuous drain current is 300mA per transistor at 25°C with VGS=10V.
The maximum gate threshold voltage is 2.1V at ID=250µA.
Yes, it has ESD protection rated at 2kV (HBM).