| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,709 pcs
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2709 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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| Tape & Reel | |
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The 2N7002BKMB is a single N-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology. It is designed for very fast switching and is logic-level compatible, with a maximum drain-source voltage of 60V and continuous drain current of 450mA. The device features a low on-resistance of 1.6 Ohm maximum at 10V gate drive and 450mA drain current. Gate threshold voltage is 2.1V maximum at 250µA. Low gate charge (0.6nC) and input capacitance (50pF) enable high-speed operation. ESD protection up to 2kV HBM is included.
Typical applications include relay drivers, low-side load switches, high-speed line drivers, and general switching circuits. The MOSFET is housed in a leadless ultra-small DFN1006B-3 (SOT883B) surface mount package with a body size of 1.0 x 0.6 x 0.37 mm, making it suitable for space-constrained designs. Power dissipation is 360mW at 25°C ambient, and the operating junction temperature range is -55°C to 150°C.
Maximum drain-source voltage is 60V.
Surface mount DFN1006B-3 (3-XFDFN) package.
-55°C to 150°C junction temperature.
RoHS3 compliant (unverified).
Maximum gate threshold voltage is 2.1V at 250µA drain current.
Maximum on-resistance is 1.6 Ohm at 450mA and 10V gate drive.
Yes, ESD protection up to 2kV HBM.