| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Nexperia 2N7002/HAMR is an N-channel MOSFET designed for various electronic applications. It features a maximum Drain to Source Voltage (Vdss) of 60V and can handle a continuous current of 300mA (Tc). The MOSFET technology offers efficient switching and amplification capabilities.
Key electrical characteristics include a maximum Gate to Source Voltage (Vgs) of ±30V and a threshold voltage (Vgs(th)) of 2.5V (Max) @ 250µA. The On Resistance (Rds On) is a maximum of 5 Ohm @ 500mA, 10V. Input capacitance (Ciss) is specified at a maximum of 50pF @ 10V.
This device has a maximum power dissipation of 830mW (Tc) and operates within a temperature range of -65°C to 150°C (TJ). It is packaged in a TO-236-3, SC-59, SOT-23-3 configuration, specifically the TO-236AB supplier device package, and is designed for surface mount applications.
The maximum Drain to Source Voltage (Vdss) is 60V.
The continuous current rating is 300mA (Tc).
The maximum Gate to Source Voltage (Vgs) is ±30V.
The Gate Threshold Voltage (Vgs(th)) is a maximum of 2.5V @ 250µA.
The maximum On Resistance (Rds On) is 5 Ohm @ 500mA, 10V.
The package is TO-236-3, SC-59, SOT-23-3, specifically the TO-236AB supplier device package.
The operating temperature range is -65°C to 150°C (TJ).