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200 pcs
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200 pcs | On Request | 100 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The 2N7000 is an N-channel enhancement MOSFET, a type of field-effect transistor that operates based on voltage. It functions as a variable resistor where the resistance between the drain and source changes with the applied gate-to-source voltage (Vgs). When Vgs is 0, the MOSFET acts as an open switch. As Vgs increases, the resistance decreases.
This MOSFET offers a lowest resistance path of 2 Ohms when the gate-to-source voltage is 10V, and a typical resistance of 2 Ohms at the minimum threshold voltage of 4.5V. It has an absolute maximum drain-to-source voltage of 60V and a maximum gate-to-source voltage of 18V. The 2N7000 is typically packaged in a TO-92 through-hole configuration.
As a power MOSFET, the 2N7000 is designed to handle larger loads. Its operation is based on the principle that current flow between drain and source is controlled by the voltage applied to the gate. This makes it useful in applications where voltage control of current is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the 2N7000 is 60V.
The maximum gate-source voltage for the 2N7000 is 18V.
The typical on-resistance of the 2N7000 at a gate-source voltage of 4.5V is 2 Ohms.
The 2N7000 is available in a TO-92 package.