| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | 9231 | On Request | On Request |
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The 2N6796 is a high-reliability N-Channel MOSFET manufactured by Harris Semiconductor. This component is designed for demanding applications, offering a drain-source voltage of 100V and a continuous drain current of 8.0A at 25°C case temperature.
Key electrical characteristics include a low static drain-source on-state resistance of 0.18 Ohms at 10V gate-source voltage and 5.0A drain current. The device also features a gate-source voltage threshold between 2.0V and 4.0V. Dynamic characteristics include a gate charge of 28.51 nC (on-state) and switching times such as turn-on delay of 30 ns and fall time of 45 ns.
The operating and storage temperature range is -55°C to +150°C. The MOSFET is housed in a TO-205 case, suitable for through-hole mounting. It is available with high-reliability screening per MIL-PRF-19500, JANTX level, and can be specified as RoHS compliant by adding the '-PBF' suffix.
This MOSFET is suitable for various power switching and amplification applications where reliability is critical. Its robust design and specified parameters make it a reliable choice for defense and industrial systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
TO-205 (through-hole metal can package).
-55°C to +150°C.
8.0A.
0.18Ω maximum at 5A, and 0.195Ω maximum at 8A.
2.0V to 4.0V at 25°C.
28.51 nC at Vgs=10V, Id=8A, Vds=50V.