| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Pulsed Drain Current |
The 2N6782 is a single, high-reliability N-channel power MOSFET manufactured by Infineon Technologies. It is designed for applications requiring fast switching, such as motor controls and power supplies.
Key electrical characteristics include a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 3.5A at 25°C case temperature, derating to 2.25A at 100°C. The pulsed drain current (IDM) can reach up to 14A. The gate source voltage (VGS) is rated at ±20V. The device has a maximum power dissipation of 15W at 25°C, with a junction-to-case thermal resistance that allows for efficient heat management.
This MOSFET is housed in a TO-39 (TO-205AF) package, suitable for through-hole mounting. The operating and storage temperature range is -55°C to +150°C. Applications include fast switching circuits, motor controls, and power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.00 | $1.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the 2N6782 is 100V.
The continuous drain current (ID) at a case temperature of 25°C is 3.5A.
The maximum power dissipation (PD) at a case temperature of 25°C is 15W.
The 2N6782 is supplied in a TO-39 (TO-205AF) package.
The operating and storage temperature range for the 2N6782 is -55°C to +150°C.