| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Input Capacitance | |
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| Pulsed Drain Current | |
| Storage Temperature | |
| Tape & Reel |
The Infineon 2N6782 is an N-Channel Power MOSFET in an enhancement mode.
Key electrical specifications include a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 3.5A at 25°C case temperature. The pulsed drain current (IDM) can reach up to 14A. The gate-source voltage (VGS) is rated at ±20V. Maximum power dissipation (PD) is 15W at 25°C case temperature.
This MOSFET is suitable for applications such as fast switching, motor controls, and power supplies. It comes in a TO-205AF (TO-39) package.
Operating and storage temperatures range from -55°C to +150°C. The lead temperature for 10 seconds is 300°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the 2N6782 is 100V.
The continuous drain current (ID) at a case temperature of 25°C is 3.5A.
The 2N6782 is available in a TO-205AF (TO-39) package.
The operating and storage temperature range is -55°C to +150°C.
The 2N6782 is suitable for fast switching, motor controls, and power supplies.