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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | 9952 | On Request | On Request |
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The 2N6438 from Microsemi Corporation is a PNP Silicon Power Transistor designed for demanding applications requiring high reliability. This component features a maximum Collector-Emitter Voltage (VCEO) of 140V and a continuous Collector Current (IC) of 25A, with a peak current capability of 50A. It can handle a total power dissipation of 200W at 25°C case temperature, with a derating of 1.14W/°C above that temperature.
The transistor operates within a wide junction temperature range of -65°C to +200°C, and has a low thermal resistance of 0.875°C/W from junction to case. Key electrical characteristics include a minimum DC current gain (hFE) of 12 at 25A and 2.0V VCE, a maximum Collector-Emitter Saturation Voltage (VCE(sat)) of 1.8V at 25A/2.5A, and a Base-Emitter Saturation Voltage (VBE(sat)) of 2.5V at 25A/2.5A. The current gain bandwidth product (fT) is 40MHz at 1.0A and 10V VCE.
Packaged in a TO-3 case, the 2N6438 is suitable for through-hole mounting. It is available in standard, non-RoHS (Sn/Pb plating), and RoHS compliant versions (by adding '-PBF' suffix). High-reliability screening per MIL-PRF-19500, JANTX level, is also available by adding 'HR' to the part number suffix.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 140V.
The maximum continuous collector current is 25A.
The maximum total power dissipation is 200W at a case temperature of 25°C.
The 2N6438 is housed in a TO-3 case.
The operating and storage junction temperature range is -65°C to +200°C.
The minimum DC current gain is 20 at a collector current of 10A and a collector-emitter voltage of 2.0V.
