| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N6059 is a monolithic NPN Darlington power transistor from STMicroelectronics, designed for general-purpose amplifier and low-frequency switching applications. It features a high DC current gain with a minimum hFE of 750 at 6A collector current and 3V collector-emitter voltage, and a typical gain of 3500 at 5A. The transistor can handle a maximum collector-emitter voltage of 100V and a continuous collector current of 12A, with a peak current capability of 20A. Power dissipation is rated at 150W at a case temperature of 25°C, with a thermal resistance junction-to-case of 1.17°C/W. The device includes built-in base-emitter shunt resistors for improved stability. It is packaged in a TO-204AA (TO-3) chassis-mount package, suitable for direct mounting on a heatsink. The operating junction temperature range is -65°C to 200°C.
100V DC.
TO-204AA (TO-3) chassis-mount package.
200°C.
RoHS3 compliant (unverified).
Minimum 750 at 6A, 3V; typical 3500 at 5A, 3V.
12A.
150W at case temperature 25°C.