| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6059 is an NPN Darlington power transistor designed for high-current, low-frequency power applications. It provides a collector-emitter sustaining voltage of 100V and a continuous collector current rating of 12A, making it suitable for general-purpose amplifier and low-frequency switching circuits.
The transistor offers a high DC current gain of 750 minimum at 6A collector current, with a minimum gain of 100 at 12A. The collector-emitter saturation voltage is limited to 3V maximum at 12A, ensuring efficient switching. Maximum power dissipation is 150W at 25°C case temperature, with a junction-to-case thermal resistance of 1.17°C/W.
The 2N6059 is housed in a TO-3 (TO-204AA) metal package for chassis mounting, providing excellent thermal performance. It is rated for an operating and storage junction temperature range of -65°C to +200°C. The monolithic Darlington construction includes built-in base-emitter shunt resistors for enhanced stability.
The 2N6059 has a collector-emitter sustaining voltage of 100V minimum.
The continuous collector current rating is 12A.
The 2N6059 is available in a TO-3 (TO-204AA) package for chassis mounting.
The operating and storage junction temperature range is -65°C to +200°C.
According to existing product data, the 2N6059 is RoHS3 compliant.
The DC current gain is at least 750 at 6A collector current and at least 100 at 12A collector current.
The collector-emitter saturation voltage is 3V maximum at 12A with 120mA base current.