| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The 2N5839 is an NPN bipolar junction transistor manufactured by Vishay Dale. It is designed for applications requiring high voltage and current handling capabilities.
Key electrical specifications include a maximum Collector-Emitter Voltage of 275V, a maximum Collector-Base Voltage of 300V, and a maximum Emitter-Base Voltage of 6V. The transistor can handle a continuous Collector Current of up to 3A and has a maximum Collector Power Dissipation of 100W. The current gain (hFE) ranges from 10 to 50, with a transition frequency of 5 MHz.
This component comes in a TO-3 package, which is suitable for through-hole mounting and provides good thermal dissipation. The 2N5839 is a versatile component for various power switching and amplification circuits.
Environmental compliance includes RoHS3 compliance, MSL 1 rating, and REACH unaffected status. However, these compliance details are based on existing database information and may require verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage for the 2N5839 is 275V.
The 2N5839 transistor has a maximum Collector Current of 3A.
The 2N5839 has a maximum Collector Power Dissipation of 100W.
The current gain (hFE) for the 2N5839 ranges from 10 to 50.
The 2N5839 transistor comes in a TO-3 package.
The 2N5839 is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2N5839 is 1 Unlimited.