| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TIP661 is a silicon NPN bipolar transistor manufactured by Texas Instruments. It is designed for power and general-purpose applications, offering a maximum collector-emitter voltage of 350V and a maximum collector current of 7A. The transistor has a maximum power dissipation of 80W and a maximum junction temperature of 200°C.
This component is housed in a TO-3 package, which is suitable for power applications requiring robust thermal management. The TIP661 has a minimum Hfe of 5, indicating its gain characteristics. Its structure is NPN, built with silicon material.
Key electrical characteristics include a maximum collector-emitter voltage of 350V and a maximum collector current of 7A. The power dissipation capability is rated at 80W, making it suitable for demanding power handling tasks. The maximum junction temperature is 200°C, ensuring reliability under operational stress.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Uce,max) for the TIP661 is 350V.
The TIP661 transistor has a maximum collector current (Ic,max) of 7A.
The TIP661 has a maximum power dissipation (Pc,max) of 80W.
The maximum junction temperature (Tj,max) for the TIP661 is 200°C.
The TIP661 transistor is supplied in a TO-3 package.
The minimum Hfe for the TIP661 transistor is 5.