| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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56 pcs
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56 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5665 is a high-performance NPN power silicon switching transistor designed for demanding applications. It offers a maximum Collector-Emitter Voltage (VCEO) of 300 Vdc and a maximum Collector Current (IC) of 5 Adc, making it suitable for power switching circuits.
Key electrical characteristics include a minimum Forward-Current Transfer Ratio (hFE) of 25 at IC = 1.0 Adc and VCE = 5.0 Vdc, and a low Collector-Emitter Saturation Voltage (VCE(sat)) of 0.4 Vdc at IC = 3.0 Adc and IB = 0.6 Adc. The transistor also exhibits a fast Turn-Off Time (toff) of 2.0 μs under specified test conditions.
This transistor is available in various industry-standard packages, including TO-66 (TO-213AA), TO-5, and TO-39 (TO-205AD), facilitating integration into different PCB layouts. Its operating junction temperature range is -65 to +200 °C, providing robustness in various thermal environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the 2N5665 is 300 Vdc.
The maximum Collector Current (IC) for the 2N5665 is 5 Adc.
The minimum Forward-Current Transfer Ratio (hFE) for the 2N5665 is 25 at IC = 1.0 Adc and VCE = 5.0 Vdc.
The operating and storage junction temperature range for the 2N5665 is -65 to +200 °C.
The 2N5665 is available in TO-66 (TO-213AA), TO-5, and TO-39 (TO-205AD) packages.