Mfr Part #:

2N3767

The Thomson-CSF 2N3767 is an NPN power silicon transistor designed for various applications. It offers a maximum Collector-Emitter Voltage of 80V and a maximum Collector Current of 4A.

✓ Total Stock: 51 pcs

$ Price Range: $0.77

2N3767 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Partservice ✓ Non-Authorised Inventory information	51 pcs On Request	51 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2N3767 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	Thomson-CSF
Mounting Type	Through Hole
Turn Off Time	2.5 μs
Turn On Time	0.25 μs

View Similar Products (0)

2N3767 Description

Short technical summary and product information.

The 2N3767 from Thomson-CSF is a medium-power NPN silicon transistor housed in a TO-66 package. This device is qualified per MIL-PRF-19500/518 and is suitable for applications requiring robust performance.

Key electrical characteristics include a maximum Collector-Emitter Voltage (VCEO) of 80 Vdc and a maximum Collector Current (IC) of 4 Adc. The transistor can handle a Total Power Dissipation (PT) of 25W at a case temperature of +25°C, with linear derating up to +200°C. The operating and storage temperature range is from -65°C to +200°C.

Further specifications include a maximum Collector-Base Voltage (VCBO) of 100 Vdc and a maximum Emitter-Base Voltage (VEBO) of 6.0 Vdc. The Forward-Current Transfer Ratio (hFE) ranges from 20 to 160 under specific test conditions. Dynamic characteristics include a small-signal forward current transfer ratio (hfe) between 1.0 and 8.0 at 10 MHz, and an output capacitance (Cobo) of up to 50 pF.

This transistor is designed for through-hole mounting. Its thermal resistance from junction to case (RθJC) is a maximum of 7.0 °C/W. The 2N3767 is suitable for power switching and amplification circuits where reliability and performance are critical.

2N3767 Quick Information

Product Type: NPN Power Silicon Transistor

Canonical Name: 2N3767 NPN Power Silicon Transistor

Subcategory: Bipolar (BJT) - Single, Pre-Biased

2N3767 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

2N3767 Estimated Pricing

Qty	Low	High
1+	$0.77	$0.77

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N3767 Features

NPN power silicon transistor.
Maximum Collector-Emitter Voltage is 80V.
Maximum Collector Current is 4A.
Total Power Dissipation is 25W.
TO-66 package for through-hole mounting.

2N3767 Applications

Suitable for power switching applications.
Used in amplification circuits.
Designed for high-reliability systems.
Applicable in industrial control.
Component in power supply designs.

2N3767 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum Collector-Emitter Voltage (VCEO) for the 2N3767?

The maximum Collector-Emitter Voltage (VCEO) for the 2N3767 is 80 Vdc.

What is the maximum Collector Current (IC) for the 2N3767?

The maximum Collector Current (IC) for the 2N3767 is 4 Adc.

What is the maximum power dissipation of the 2N3767 at 25°C?

The total power dissipation (PT) for the 2N3767 at a case temperature of +25°C is 25 W.

What is the operating temperature range for the 2N3767 transistor?

The operating and storage temperature range for the 2N3767 is -65°C to +200°C.

What package type is the 2N3767 available in?

The 2N3767 is available in a TO-66 package.

What is the typical turn-on time for the 2N3767?

The turn-on time (ton) for the 2N3767 is a maximum of 0.25 μs.

What is the typical turn-off time for the 2N3767?

The turn-off time (toff) for the 2N3767 is a maximum of 2.5 μs.