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70 pcs
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70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5401 is a PNP silicon bipolar junction transistor designed for amplifier applications. It features a maximum collector-emitter breakdown voltage (VCEO) of 150V and a continuous collector current (IC) of up to 600mA.
Key electrical characteristics include a DC current gain (hFE) ranging from 50 to 240 at 10mA and 5V. The transistor exhibits a low collector-emitter saturation voltage (VCE(sat)) of 0.2V at 10mA and 1.0mA, and 0.5V at 50mA and 5.0mA. Its current-gain bandwidth product (fT) is a minimum of 100MHz at 10mA and 10V.
This device is housed in a TO-92 package, suitable for through-hole mounting. The operating and storage junction temperature range is from -55°C to +150°C. The 2N5401 is also noted as being Pb-Free.
With its robust specifications, the 2N5401 is well-suited for various amplification and switching applications in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage (VCEO) for the 2N5401 is 150 Vdc.
The 2N5401 has a continuous collector current (IC) rating of 600 mAdc.
The DC current gain (hFE) of the 2N5401 ranges from 50 to 240 when measured at 10 mAdc collector current and 5.0 Vdc collector-emitter voltage.
The 2N5401 is supplied in a TO-92 package.
The operating and storage junction temperature range for the 2N5401 is -55°C to +150°C.
The 2N5401 is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2N5401 is 1.