| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Tape & Reel |
The CDIL 2N5322 is a PNP silicon power switching transistor designed for medium power amplifier and switching applications. It features a TO-39 metal can package, providing robust thermal performance.
Key electrical characteristics include a Collector Emitter Voltage (VCEO) of up to 75V and a continuous Collector Current (IC) of 2.1A. The device offers a maximum power dissipation of 10W at 25°C case temperature. Its operating and storage junction temperature range is from -65°C to +200°C.
With a Junction to Case thermal resistance of 17.5°C/W, the 2N5322 is suitable for applications requiring efficient heat dissipation. The transistor exhibits a DC Current Gain (hFE) of at least 10 at 1A and 2V. Switching characteristics include a turn-on time of up to 100ns and a turn-off time of up to 1000ns under specified test conditions.
This transistor is also available in Defence/Military, HIREL, and JANXXX grades, indicating its suitability for demanding environments. The TO-39 package is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector Emitter Voltage (VCEO) for the 2N5320/5322 is 75V.
The maximum continuous Collector Current (IC) is 2.1A.
The power dissipation (PD) at 25°C case temperature is 10W.
The operating and storage junction temperature range is -65°C to +200°C.
The 2N5322 transistor comes in a TO-39 Metal Can package.
