| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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80 pcs
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80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The 2N4405 is a PNP Silicon Transistor manufactured by Microsemi Corporation. This component is designed for through-hole mounting and comes in a TO-39 case.
Key electrical specifications include a maximum collector-emitter voltage (Vce) of 80V and a maximum collector current (Ic) of 1A. The device offers a minimum forward current transfer ratio (hFE) of 100 and a maximum transition frequency (ft) of 200 MHz. Maximum power dissipation is rated at 1.2W, with a derating of 28mW/°C. The operating temperature range extends up to 175°C.
Additional electrical characteristics include a maximum collector-base voltage (Vcb) of 80V and a maximum emitter-base voltage (Veb) of 5V. The transistor exhibits a maximum fall time (tf) of 35ns and a maximum rise time (tr) of 25ns. Collector capacitance (Cc) is typically 10pF.
This transistor is suitable for various general-purpose amplification and switching applications where PNP characteristics are required. Its through-hole package facilitates easy integration into circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) for the 2N4405 is 80V.
The maximum collector current (Ic) for the 2N4405 is 1A.
The minimum forward current transfer ratio (hFE) for the 2N4405 is 100.
The minimum transition frequency (ft) for the 2N4405 is 200 MHz.
The 2N4405 transistor comes in a TO-39 case and is designed for through-hole mounting.
The maximum operating temperature for the 2N4405 is 175°C.
