| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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185 pcs
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185 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| SVHC Present |
The Infineon Technologies IRF100P218 is a StrongIRFET™ N-channel MOSFET. It features a very low on-resistance (RDS(on)) of 1.1 mΩ typical and 1.28 mΩ maximum, contributing to reduced conduction losses.
This MOSFET is rated for a drain-source voltage (VDS) of 100V and can handle a continuous drain current (ID) of up to 209A (package limited) or 483A (silicon limited). Its excellent gate charge x RDS(on) figure of merit (FOM) makes it ideal for high switching frequency applications.
The operating temperature range extends up to 175°C, increasing reliability compared to parts rated at 150°C. The device is supplied in a PG-TO 247-3 package suitable for through-hole mounting.
Key benefits include lower overshoot voltage and optimized Qrr. The product validation is performed according to JEDEC standards, and it is halogen-free according to IEC61249-2-21.
The maximum drain-source voltage (VDS) for the IRF100P218 is 100V.
The typical on-resistance (RDS(on)) for the IRF100P218 is 1.1 mΩ.
The maximum continuous drain current (ID) for the IRF100P218 is 209A (package limited).
The IRF100P218 can operate at temperatures up to 175°C.
The IRF100P218 is supplied in a PG-TO 247-3 package.
Yes, the IRF100P218 is halogen-free according to IEC61249-2-21.