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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N4399 from MOSPEC is a PNP Silicon Power Transistor, part of a series available with high-reliability screening per MIL-PRF-19500, JANTX level. This transistor is designed for demanding applications, featuring a maximum collector-base voltage of 40V and a maximum collector-emitter voltage of 40V.
Key electrical characteristics include a continuous collector current of 30A and a peak collector current of 50A. The base current capabilities are rated at 7.5A continuous and 15A peak. Power dissipation is rated at 200W at 25°C case temperature, with a derating of 1.15W/°C above 25°C. The operating and storage junction temperature range is from -65°C to +200°C.
This series is available in non-RoHS (Sn/Pb plating) and RoHS compliant versions. The datasheet provides detailed specifications for DC current gain (hFE), collector-emitter saturation voltage (VCE(sat)), base-emitter saturation voltage (VBE(sat)), and base-emitter on voltage (VBE(ON)) under various test conditions.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 40V.
The maximum continuous collector current is 30A, with a peak rating of 50A.
The total power dissipation is 200W at a case temperature of 25°C.
The operating junction temperature range is -65°C to +200°C.
The minimum DC current gain is 40 at 1A collector current and 15 at 10A or 15A collector current.
The minimum current gain bandwidth product is 4MHz at 1A collector current.