BAT5406WH6327XTSA1
Infineon
The Infineon BAT5406WH6327XTSA1 is a silicon Schottky diode designed for low-loss, fast-recovery applications. It features a 30V reverse voltage rating and 200mA forward current.
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47 pcs
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47 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N4393 is an N-Channel Junction Field-Effect Transistor (JFET) manufactured by Motorola Semiconductor. It is designed for applications such as analog switches, choppers, and commutators.
Key electrical characteristics include a gate-to-source breakdown voltage of -40V and a drain-to-source saturation current of 5mA. The gate cutoff voltage is specified as -0.5V minimum and -3V maximum. Gate leakage is typically less than 50pA at room temperature, making it suitable for low-level signal applications.
This JFET is housed in a hermetically sealed TO-18 package, making it suitable for military applications. It is designed for through-hole mounting.
The 2N4393 is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate-to-source breakdown voltage is -40V.
The drain-to-source saturation current is a minimum of 5mA.
The gate cutoff voltage is between -0.5V and -3V.
The 2N4393 is in a TO-18 package.
The 2N4393 is a through-hole mount component.
The 2N4393 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.