BAT5406WH6327XTSA1
Infineon
The Infineon BAT5406WH6327XTSA1 is a silicon Schottky diode designed for low-loss, fast-recovery applications. It features a 30V reverse voltage rating and 200mA forward current.
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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N4393 from STMicroelectronics is an N-Channel Junction Field-Effect Transistor (JFET) designed for various switching and signal processing applications. It is part of a series that includes the 2N4391 and 2N4392, offering specific characteristics for different design needs.
Key electrical specifications include a Gate to Source Breakdown Voltage of -40V and a Drain to Source Saturation Current of 5mA. The Gate to Source Cutoff Voltage is specified with a minimum of -0.5V and a maximum of -3V under test conditions of VDS = 20V and ID = 1nA. The device exhibits low noise characteristics, typically 1.2 nV/√Hz, and low gate leakage, typically less than 50pA at room temperatures.
This JFET is housed in a hermetically sealed TO-18 package, making it suitable for demanding environments, including military applications. The mounting type is through-hole, and it is supplied in bulk packaging. The operating junction temperature ranges from -55°C to 125°C, with a storage temperature range of -65°C to 150°C.
The 2N4393 is targeted for applications such as low on-resistance analog switches, choppers, and commutators. Its low cutoff voltage makes it particularly ideal for low-level power supplies.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
-40V
5mA
-0.5V
TO-18
Through Hole