| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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38 pcs
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38 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N4393 is an N-Channel Junction Field-Effect Transistor (JFET) manufactured by SESCOCEM. It is designed for applications requiring switching, chopping, and commutation functions. This JFET features low noise characteristics, with a typical noise level of 1.2 nV/√Hz, and offers fast switching speeds.
The device has a low cutoff voltage, with the 2N4393 specifically having a cutoff voltage less than 3.0V, making it suitable for low-level power supplies. Gate leakage is typically less than 50pA at room temperatures. The 2N4393 is available in a TO-18 package, which is hermetically sealed and suitable for military applications.
Key electrical characteristics include a Gate to Source Breakdown Voltage of -40V, a minimum Drain to Source Saturation Current of 5mA, and a minimum Gate to Source Cutoff Voltage of -0.5V. The maximum continuous device power dissipation is 1800mW, with power derating at 12mW/°C. The operating junction temperature ranges from -55°C to 125°C.
This JFET is suitable for use in low on-resistance analog switches. It is offered in a Through-Hole mounting style with a TO-18 package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40V
5mA
-0.5V to -3V
TO-18
Through Hole
RoHS3 Compliant
1 Unlimited
