BUK456-200B
SST
The SST BUK456-200B is an N-channel enhancement mode PowerMOS transistor designed for switching applications. It offers a 200V drain-source voltage and a 19A DC drain current.
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N4384 is a silicon NPN bipolar junction transistor (BJT) from Signetics, housed in a TO18 case. This transistor is designed for general-purpose amplification and switching applications.
Key electrical specifications include a maximum collector-emitter voltage (Vce) of 30V and a maximum collector current (Ic max) of 0.8A. It offers a minimum forward current transfer ratio (hFE) of 100 and a transition frequency (ft) of 120 MHz. The maximum collector power dissipation (Pc) is 0.5W, with a maximum operating junction temperature (Tj) of 175°C.
The TO18 package is a metal can package commonly used for discrete transistors, designed for through-hole mounting. Its robust construction and electrical characteristics make it suitable for a range of electronic circuits where reliable NPN transistor performance is required.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) for the 2N4384 is 30V.
The maximum collector current (Ic max) for the 2N4384 is 0.8A.
The minimum forward current transfer ratio (hFE) for the 2N4384 is 100.
The 2N4384 transistor comes in a TO18 case.
No, the 2N4384 is not surface mounted; it is designed for through-hole mounting.
The maximum operating junction temperature (Tj) for the 2N4384 is 175°C.
The transition frequency (ft) of the 2N4384 is 120 MHz.