| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
70 pcs
|
70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Storage Temperature |
The BUK456-200B from SST is an N-channel enhancement mode field-effect power transistor housed in a plastic TO-220AB envelope. This device is engineered for various switching applications, including Switched Mode Power Supplies (SMPS), motor control, welding, and DC/DC and AC/DC converters.
Key electrical specifications include a maximum drain-source voltage of 200V and a continuous DC drain current of 19A at 25°C. The transistor can handle a pulse peak current of up to 76A. It features a maximum total power dissipation of 150W at 25°C and a junction temperature limit of 175°C. The drain-source on-state resistance is typically 0.18Ω and a maximum of 0.20Ω at 10A and 10V gate-source voltage.
Thermal management is supported by a thermal resistance junction to mounting base of 1.0 K/W. The device is suitable for general-purpose switching applications requiring robust performance and reliability.
Packaged in a TO-220AB through-hole package, the BUK456-200B is designed for easy integration into circuit boards. Its specifications make it a versatile component for power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 200 V.
The maximum continuous drain current at 25°C is 19 A.
The maximum power dissipation is 150 W.
The typical gate threshold voltage is 3.0 V.
The maximum drain-source on-state resistance is 0.20 Ω.
The BUK456-200B is supplied in a TO-220AB package.