| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The InterFET 2N3972 is an N-Channel Junction Field-Effect Transistor (JFET) suitable for discrete semiconductor applications. It offers a drain-source breakdown voltage of 10V and a continuous drain current of 5mA. The device has a power dissipation rating of 300mW and a drain-source resistance of 100 Ohms.
This JFET operates with a gate-source cutoff voltage of -3V. It is constructed using silicon technology and features a single configuration. The component is housed in a TO-18-3 package and is designed for through-hole mounting.
Key electrical characteristics include a Vgs(off) of -3V and an Idss of 30mA. The 2N3972 is a reliable choice for applications requiring specific JFET performance parameters.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 10V.
The continuous drain current is 5mA.
The power dissipation is 300mW.
The gate-source cutoff voltage is -3V.
The 2N3972 is an N-Channel JFET.
The 2N3972 is supplied in a TO-18-3 package.
The 2N3972 is mounted using the through-hole method.