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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The InterFET 2N3972 is an N-Channel Junction Field-Effect Transistor (JFET) designed for various electronic applications. It features a drain-source breakdown voltage of 10V and a continuous drain current of up to 5mA. The device has a power dissipation rating of 300mW.
This JFET operates with a gate-source breakdown voltage of -40V and a typical gate-source cutoff voltage of -3V. The on-resistance (Rds On) is specified at 100 Ohms. The transistor is constructed using silicon technology and is configured as a single unit.
The 2N3972 is packaged in a TO-18-3 case and utilizes a through-hole mounting style, making it suitable for traditional printed circuit board assembly. It is supplied in bulk packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 10V.
The continuous drain current is 5mA.
The power dissipation is 300mW.
The 2N3972 is an N-Channel JFET.
The 2N3972 is supplied in a TO-18-3 package.