| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Material |
The RTC 2N396A is a PNP Germanium transistor suitable for medium-speed switching applications, particularly within data-processing equipment. It features a maximum collector-base voltage of 30V and a maximum collector current of 0.2A.
Key electrical characteristics include a maximum collector power dissipation of 0.15W, a maximum collector-emitter voltage of 20V, and a maximum emitter-base voltage of 20V. The transistor operates up to a maximum junction temperature of 100°C and has a transition frequency of 4MHz.
Additional specifications include a typical collector capacitance of 24pF and a minimum forward current transfer ratio (hFE) of 30. The material is Germanium, and the polarity is PNP. This component is noted as New Old Stock (NOS) and is no longer available for export.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-base voltage (Vcb) for the 2N396A is 30V.
The maximum collector current (Ic max) for the 2N396A is 0.2A.
The maximum operating junction temperature (Tj) for the 2N396A is 100°C.
The transition frequency (ft) of the 2N396A is 4MHz.
The minimum forward current transfer ratio (hFE) for the 2N396A is 30.
The 2N396A transistor is made of Germanium (Ge).
The 2N396A transistor has a PNP polarity.