| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Material | |
| Mounting Type | |
| Transistor Type |
The 2N1304 is a Germanium NPN transistor manufactured by MINIWATT DARIO. It is specifically designed for use in computer and switching applications.
This transistor is part of the broader category of discrete semiconductor products, falling under the sub-category of Bipolar Junction Transistors (BJTs), specifically single, pre-biased types. Its construction utilizes Germanium material, which was common in early transistor technology.
While detailed specifications such as collector current, voltage ratings, and power dissipation are not provided in the available data, the part is listed with a RoHS3 Compliant status. Further details regarding its electrical characteristics, operating temperature range, and package type would typically be found in a comprehensive datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N1304 is a Germanium NPN transistor.
The 2N1304 is designed for computer and switching applications.
The 2N1304 is RoHS3 Compliant.
The MSL for the 2N1304 is Level 1.