ATF-38143-TR1G
Avago Technologies
The Avago Technologies ATF-38143-TR1G is a pHEMT FET RF component. It operates at a rated voltage of 5.5V and a frequency of 2GHz.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3955 from Intersil is an N-Channel Dual Silicon Junction Field-Effect Transistor designed for various amplification applications. It features a TO-71 package, making it suitable for through-hole mounting.
Key electrical characteristics include a Gate Source Breakdown Voltage (V(BR)GSS) of -50V and a maximum Gate Current (IG) of 50mA. The device can dissipate up to 250mW per side at 25°C, with a power derating of 4.3mW/°C. Static electrical characteristics include a Gate Reverse Current (IGSS) of -100pA and a Gate Source Cutoff Voltage (VGS(OFF)) ranging from -1V to -4.5V.
Dynamic electrical characteristics are also specified, with Common Source Forward Transconductance (gfs) ranging from 1000µS to 3000µS at 1kHz and 1000µS at 200MHz. Input capacitance (Ciss) is 444pF, and output capacitance (Crss) is 1.2pF.
This dual junction FET is suitable for applications requiring high input impedance amplifiers and low to medium frequency differential amplifiers.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Gate Source Breakdown Voltage (V(BR)GSS) is -50V.
The maximum Gate Current (IG) is 50mA.
The total device power dissipation is 250mW per side at 25°C, and 500mW for both sides at 85°C case temperature.
The 2N3955 is available in a TO-71 package.
The typical Common Source Forward Transconductance (gfs) at 1kHz is 1000µS to 3000µS.
The typical Common Source Input Capacitance (Ciss) is 444pF.
The typical Noise Figure (NF) is 0.5dB.