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2N3955 The 2N3955 is an N-Channel Dual Silicon Junction Field-Effect Transistor from TA-I Technology. It features a breakdown voltage of -50V and a maximum transconductance of 3000µS.
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2N3955

Available from 1 distributors
Mfr Name: TA-I Technology
TA-I Technology
The 2N3955 is an N-Channel Dual Silicon Junction Field-Effect Transistor from TA-I Technology. It features a breakdown voltage of -50V and a maximum transconductance of 3000µS.
✓ Total Stock: 4 pcs
$ Price Range: $0.06

2N3955 Available from 1 distributor

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2N3955 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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2N3955 Description

Short technical summary and product information.

The 2N3955 is an N-Channel Dual Silicon Junction Field-Effect Transistor manufactured by TA-I Technology. This component is designed for applications requiring high input impedance and differential amplification.

 

Key electrical characteristics include a Gate Source Breakdown Voltage of -50V and a maximum Gate Current of 50mA. The device offers a typical Drain Saturation Current (Pulsed) ranging from 0.5mA to 5mA. Its Common Source Forward Transconductance (gfs) is rated up to 3000µS at 1 kHz and 1000µS at 200 MHz.

 

With a TO-71 package, the 2N3955 is suitable for through-hole mounting. The device's power dissipation is rated at 250mW per side, with a derating of 4.3mW/°C. It is designed for use in low and medium frequency differential amplifiers and high input impedance amplifiers.

 

Static electrical characteristics include a Gate Source Cutoff Voltage between -1V and -4.5V. Dynamic characteristics include input capacitance (Ciss) of 444pF and output capacitance (gos) of 35µS.

2N3955 Quick Information

Product Type: Field-Effect Transistor
Canonical Name: 2N3955 N-Channel Dual Silicon Junction Field-Effect Transistor
Subcategory: Dual Junction FET

2N3955 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N3955 Estimated Pricing

Qty Low High
1+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N3955 Features

  • N-Channel Dual Silicon Junction FET
  • Gate Source Breakdown Voltage: -50V
  • Max Transconductance: 3000µS at 1 kHz
  • TO-71 Package, Through Hole Mount
  • High Input Impedance Amplifiers

2N3955 Applications

  • Suitable for RF signal amplification
  • Used in high-voltage switching circuits
  • Ideal for transistor array applications
  • Supports analog and digital circuit designs

2N3955 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the Gate Source Breakdown Voltage for the 2N3955?

The Gate Source Breakdown Voltage is -50V.

What is the maximum Gate Current for the 2N3955?

The maximum Gate Current is 50mA.

What is the typical Drain Saturation Current (Pulsed) for the 2N3955?

The typical Drain Saturation Current (Pulsed) is between 0.5mA and 5mA.

What is the typical Common Source Forward Transconductance at 1 kHz?

The typical Common Source Forward Transconductance at 1 kHz is 1000µS to 3000µS.

What is the package type for the 2N3955?

The package type is TO-71.

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