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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3791 from Texas Instruments is a PNP silicon epitaxial-base power transistor housed in a Jedec TO-3 metal case. It is engineered for robust performance in power linear and switching applications.
Key electrical specifications include a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 10A. The device can handle a total power dissipation (PD) of 150W at a case temperature of 25°C. The maximum junction temperature is rated at 200°C.
This transistor is part of a series that includes complementary NPN types. Its thermal resistance from junction to case (RthJC) is 1.17°C/W, indicating efficient heat dissipation. The TO-3 package is suitable for through-hole mounting and is known for its durability in power applications.
The 2N3791 is intended for use in demanding power circuits where reliability and high current handling are essential.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N3791 is 60V.
The maximum continuous collector current (IC) for the 2N3791 is 10A.
The total device dissipation (PD) for the 2N3791 at a case temperature of 25°C is 150W.
The 2N3791 transistor comes in a TO-3 metal case.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.