| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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207 pcs
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207 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Junction Temperature | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Storage Temperature | |
| Termination Style |
The 2N3019 is a military-qualified NPN silicon transistor manufactured by Texas Instruments, suitable for high-reliability applications. This device is registered under the JEDEC 2N3019 number and meets JAN, JANTX, JANTXV, and JANS qualifications per MIL-PRF-19500/391. It is also available in rad-hard levels.
Key electrical specifications include a maximum Collector-Emitter Voltage (VCEO) of 80V, a maximum Collector Current (IC) of 1A, and a maximum Collector-Base Voltage (VCBO) of 140V. The transistor has a maximum power dissipation of 0.8W at 25°C ambient temperature and 5.0W at 25°C case temperature.
Packaged in a long-leaded TO-5 metal can, the 2N3019 is lightweight and designed for through-hole mounting. Its thermal resistance is 195°C/W junction-to-ambient and 30°C/W junction-to-case. The operating and storage temperature range is from -65°C to +200°C.
This transistor is RoHS compliant by design and is ideal for military and other high-reliability applications requiring a low-power, robust component.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
1A.
TO-5 through-hole package.
200°C.
0.8W with derating of 4.6 mW/°C above 25°C.
-65°C to +200°C.