| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
320 pcs
|
320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Thermal Resistance |
The 2N3635 is a PNP Silicon transistor manufactured by Continental Device India Ltd (CDIL). It is designed for applications requiring high voltage switching and low power amplification.
This transistor series includes the 2N3635, 2N3636, and 2N3637, all housed in a TO-39 metal can package. The 2N3635 variant offers a Collector Emitter Voltage (VCEO) of up to 140V, while the 2N3636 and 2N3637 can handle up to 175V. The maximum continuous Collector Current (IC) for all variants is 1A.
Key electrical characteristics include a maximum Collector Emitter Saturation Voltage (VCE(sat)) of 0.3V at 10mA and a Base Emitter Saturation Voltage (VBE(Sat)) of up to 0.8V at 10mA. The DC Current Gain (hFE) varies by model and test conditions, ranging from 40 to 300.
The operating and storage junction temperature range is from -65°C to +200°C. The TO-39 package is suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector emitter voltage (VCEO) for the 2N3635 is 140V.
The maximum continuous collector current (IC) for the 2N3635 is 1A.
The 2N3635 transistor comes in a TO-39 metal can package.
The operating and storage junction temperature range for the 2N3635 is -65°C to +200°C.
The DC current gain (hFE) for the 2N3635 at IC=10mA, VCE=10V is a minimum of 100.