| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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465 pcs
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465 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N4036 is an epitaxial planar PNP Silicon Transistor manufactured by Texas Instruments, suitable for small signal and medium power general purpose industrial applications. It is housed in a TO-39 case.
Key electrical specifications include a maximum Collector-Emitter Voltage (VCEO) of 65V and a maximum Continuous Collector Current (IC) of 1A. The device also offers a maximum Power Dissipation (PD) of 5W at 25°C case temperature. The operating and storage junction temperature range is from -65°C to +200°C.
Electrical characteristics include a DC Current Gain (hFE) ranging from 40 to 140 at 10V and 150mA. The transition frequency (fT) is a minimum of 60MHz at 10V and 50mA. Output capacitance (Cob) is a maximum of 30pF at 10V and 1MHz. Switching times are also specified, with a turn-on time (ton) of 110ns and a turn-off time (toff) of 700ns under specific test conditions.
This transistor is designed for general purpose industrial use, leveraging its PNP silicon construction for reliable performance in various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
65V
TO-39
-65 to +200°C
40 to 140 when VCE=10V and IC=150mA
60 MHz minimum at VCE=10V, IC=50mA, f=20MHz
5W at case temperature 25°C, 1W at ambient temperature 25°C
Turn-on time 110ns max, turn-off time 700ns max at VCE=30V, IC=150mA, IB1=IB2=15mA