| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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108 pcs
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108 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3467 from SML is a PNP silicon bipolar junction transistor (BJT) designed for switching applications. It is qualified per MIL-PRF-19500/348 and available in JAN, JANTX, and JANTXV levels.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 40V and a maximum collector current (IC) of 1A. The device exhibits a minimum forward-current transfer ratio (hFE) of 40 at 150mA and 1.0V VCE. Saturation voltages are specified, with VCE(sat) at a maximum of 0.35V for 150mA IC and 15mA IB.
Dynamic characteristics include an output capacitance (Cobo) of 25pF and an extrapolated unity gain frequency (ft) of 150MHz. Switching times are also detailed, with a delay time of 10ns, rise time of 30ns, storage time of 60ns, and fall time of 30ns.
The 2N3467 is available in a TO-39 package, suitable for through-hole mounting. It operates within a junction temperature range of -55°C to +175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N3467 is 40 Vdc.
The maximum continuous collector current (IC) for the 2N3467 is 1 Adc.
The operating and storage junction temperature range for the 2N3467 is -55°C to +175°C.
The 2N3467 is available in TO-39 and TO-5 package types.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.