| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3467 is a PNP silicon switching transistor manufactured by Texas Instruments, designed for switching applications. It is qualified per MIL-PRF-19500/348 and available in JAN, JANTX, and JANTXV levels.
Key electrical characteristics include a collector-emitter voltage (VCEO) of up to 50V and a continuous collector current (IC) of 1A. The device exhibits a maximum power dissipation of 1W at 25°C ambient temperature and 5W at 25°C case temperature. Saturation voltages are specified, with VCE(sat) up to 1.2V at 1A and IB=100mA, and VBE(sat) up to 1.6V under the same conditions.
Dynamic characteristics include an output capacitance (Cobo) of 25pF and an extrapolated unity gain frequency (ft) of 150-175MHz. Switching times are also detailed, with a delay time (td) of 10ns, rise time (tr) of 30ns, storage time (ts) of 60ns, and fall time (tf) of 30ns.
The 2N3467 is available in a TO-39 package (TO-205AD) and a TO-5 package (for 2N3467L, 2N3468L variants). The operating and storage junction temperature range is -55°C to +175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N3467 transistor has a maximum collector-emitter voltage (VCEO) of 40 Vdc for the 2N3467/2N3467L variants and 50 Vdc for the 2N3468/2N3468L variants.
The maximum continuous collector current (IC) for the 2N3467 is 1 Adc.
The 2N3467 transistor is available in a TO-39 (TO-205AD) package, and the 2N3467L and 2N3468L variants are available in a TO-5 package.
The operating and storage junction temperature range for the 2N3467 is -55 to +175 °C.
The RoHS status of the 2N3467 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2N3467 is 1 Unlimited.